This post explains for the transistor 3SK74.
The three parameters Ciss, Coss, Crss appearing on MOSFET data sheets in general relate to these parasitic capacitances. On data sheets which provide separate descriptions of static characteristics and dynamic characteristics, these are classified as dynamic characteristics. These are important parameters affecting switching performance. MOSFET designs were not well suited for power applications, limited by punchthrough breakdown (drain induced barrier. Lowering) 23, snapback, and by field-plate-i nduced impact.

The Part Number is 3SK74.
Crss Mosfet Capacitance

The function of this semiconductor is MOSFET.
Manufacturers : NEC Electronics
See the preview image and the PDF file for more information.
Image
Mosfet Gate Capacitance
Description : N-Channel Silicon dual-gate MOSFET
Features
1. Suitable for use as RF amplifier & Mixer in VHF TV Tuner
2. Low Crss : 0.03pF Typ.
3. High PG : 22dB Typ.
4. Low NF : 2.0dB Typ.
1 page
Absoulte Maximum ratings
1. Drain to Source Voltage : Vdsx = 20 V
2. Gate1 to Source Voltage : Vg1s = ± 10 V
3. Gate2 to Source Voltage : Vg2s = ± 10 V
4. Drain Current : Id = 25 mA
5. Total Power Dissipation : Pt – 200 mW
Mosfet Output Capacitance
3SK74 Datasheet
Crss Capacitance
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